IL211A/212A/213A
N
EW
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
鈥?High Current Transfer Ratio
IL211A鈥?0% Minimum
IL212A鈥?0% Minimum
IL213A鈥?00% Minimum
鈥?Isolation Voltage, 2500 VAC
RMS
鈥?Electrical Speci鏗乧ations Similar to
Standard 6 Pin Coupler
鈥?Industry Standard SOIC-8 Surface
Mountable Package
鈥?Standard Lead Spacing, .05"
鈥?Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)
鈥?Compatible with Dual Wave, Vapor Phase
and IR Re鏗俹w Soldering
鈥?Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL211A/212A/213A are optically coupled pairs
with a Gallium Arsenide infrared LED and a silicon
NPN phototransistor. Signal information, including a
DC level, can be transmitted by the device while
maintaining a high degree of electrical isolation
between input and output. The IL211A//212A/213A
comes in a standard SOIC-8 small outline package
for surface mounting which makes it ideally suited
for high density applications with limited space. In
addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
A choice of 20, 50, and 100% minimum CTR at
I
F
=10 mA makes these optocouplers suitable for a
variety of different applications.
Maximum Ratings
Emitter
Peak Reverse Voltage .....................................6.0 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25
擄
C............................90 mW
Derate Linearly from 25
擄
C......................1.2 mW/
擄
C
Detector
Collector-Emitter Breakdown Voltage...............30 V
Emitter-Collector Breakdown Voltage.................7 V
Collector-Base Breakdown Voltage..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25
擄
C2.0 mW/
擄
C
Package
Total Package Dissipation at 25
擄
C Ambient
(LED + Detector) ....................................280 mW
Derate Linearly from 25
擄
C......................3.3 mW/
擄
C
Storage Temperature ...................鈥?5
擄
C to +150
擄
C
Operating Temperature ...............鈥?5
擄
C to +100
擄
C
Soldering Time at 260
擄
C ............................. 10 sec.
Dimensions in inches (mm)
.120鹵.005
(3.05鹵.13)
.240
(6.10)
Pin One ID
.192鹵.005
(4.88鹵.13)
.004 (.10)
.008 (.20)
.050 (1.27)
typ.
.021 (.53)
Anode
.154鹵.005 Cathode
C
L (3.91鹵.13)
NC
NC
.016 (.41)
.015鹵.002
(.38鹵.05)
.008 (.20)
1
2
3
4
8
7
6
5
NC
Base
Collector
Emitter
40擄
7擄
.058鹵.005
(1.49鹵.13)
.125鹵.005
(3.18鹵.13)
Lead
Coplanarity
鹵.0015
(.04)
max.
5擄 max.
R.010
(.25) max.
.020鹵.004
(.15鹵.10)
2 plcs.
Characteristics
(
T
A
=25
擄
C)
Symbol
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Dark Current,
Collector-Emitter
Capacitance,
Collector-Emitter
Package
DC Current Transfer
Ratio
IL211A
IL212A
IL213A
Saturation Voltage,
Collector-Emitter
Isolation Test
Voltage
Capacitance,
Input toOutput
Resistance,
Input to Output
Switching Time
CTR
DC
20
50
100
V
CEsat
V
IO
C
IO
R
IO
t
on
,t
off
2500
0.5
100
3.0
50
80
130
0.4
VAC
RMS
pF
G
鈩?/div>
碌
s
I
C
=2 mA,
R
E
=100
鈩?/div>
,
V
CE
=10 V
%
I
F
=10 mA,
V
CE
=5 V
B
VCEO
B
VECO
I
CEOdark
C
CE
30
7
5
10
50
V
V
nA
pF
I
C
=10
碌
A
I
E
=10
碌
A
V
CE
=10 V
I
F
=0
V
CE
=0
V
F
I
R
C
O
1.3
0.1
25
1.5
100
V
碌
A
pF
I
F
=10 mA
V
R
=6.0 V
V
R
=0
Min.
Typ.
Max.
Unit
Condition
I
F
=10 mA,
I
C
=2.0 mA
5鈥?
INFINEON
1
2
3
