鈥?/div>
Soft Switching Applications
Type
IHW20N120R2
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25擄C
T
C
= 100擄C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area (V
CE
鈮?/div>
1200V,
T
j
鈮?/div>
175擄C)
Diode forward current
T
C
= 25擄C
T
C
= 100擄C
Diode pulsed current,
t
p
limited by
T
jmax
Diode surge non repetitive current,
t
p
limited by
T
jmax
T
C
= 25擄C,
t
p
= 10ms, sine halfwave
T
C
= 25擄C,
t
p
鈮?/div>
2.5碌s, sine halfwave
T
C
= 100擄C,
t
p
鈮?/div>
2.5碌s, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (t
p
< 5 ms)
Power dissipation
T
C
= 25擄C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
P
tot
T
j
T
stg
-
I
Fpul s
I
FSM
Symbol
V
CE
I
C
Value
1200
40
20
60
60
40
20
30
50
130
120
鹵20
鹵25
330
-40...+175
-55...+175
260
W
擄C
V
Unit
V
A
V
CE
1200V
I
C
20A
V
CE(sat),Tj=25擄C
1.55V
T
j,max
175擄C
Marking
H20R1202
Package
PG-TO-247-3-21
C
G
E
PG-TO-247-3-21
I
Cpul s
-
I
F
V
GE
1
J-STD-020 and JESD-022
1
Rev. 1.2
May 06
Power Semiconductors
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