鈥?/div>
Very low
V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175 擄C
Short circuit withstand time 鈥?5碌s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low
V
CE(sat)
Positive temperature coefficient in
V
CE(sat)
P-TO-220-3-1
Low EMI
(TO-220AB)
Low Gate Charge
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
V
CE
600 V
600 V
600 V
I
C
50 A
50 A
50 A
V
CE(sat),Tj=25擄C
1.5 V
1.5 V
1.5 V
T
j,max
175
擄C
175
擄C
175
擄C
Marking Code
G50T60
G50T60
G50T60
Package
TO-220
TO-263
TO-247
C
G
E
P-TO-247-3-1
(TO-220AC)
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
P-TO-263-3-2 (D虜-PAK)
(TO-263AB)
Type
IGP50N60T
IGB50N60T
IGW50N60T
Ordering Code
Q67040S4723
Q67040S4721
Q67040S4725
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by
T
jmax
T
C
= 25擄C
T
C
= 100擄C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area (V
CE
鈮?/div>
600V,
T
j
鈮?/div>
175擄C)
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
鈮?/div>
400V,
T
j
鈮?/div>
150擄C
Power dissipation
T
C
= 25擄C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
P
tot
T
j
T
stg
-
333
-40...+175
-55...+175
260
W
擄C
I
Cpuls
-
V
GE
t
SC
Symbol
V
CE
I
C
100
50
150
150
鹵20
5
V
碌s
Value
600
Unit
V
A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.2 Dec-04
Power Semiconductors
next
IGB50N60T 產(chǎn)品屬性
IGB50N60T
1,000
分離式半導(dǎo)體產(chǎn)品
IGBT - 單路
TrenchStop™
溝道
600V
2V @ 15V,50A
100A
333W
標(biāo)準(zhǔn)型
表面貼裝
6-TSSOP,SC-88,SOT-363
PG-SOT363-6
帶卷 (TR)
SP000054922
IGB50N60T相關(guān)型號(hào)PDF文件下載