01/99
B-43
IFN860
Dual N-Channel Silicon Junction Field-Effect Transistor
樓 Low-Noise Audio Amplifier
樓 Equivalent to Crystalonics
CD860
Absolute maximum ratings at T
A
= 25隆C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
鈥?20 V
50 mA
400 mW
2.3 mW/擄C
鈥?65擄C to 200擄C
At 25擄C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Leakage Voltage
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Differential Gate Source Voltage
Dynamic Electrical Characteristics
Transconductance
Common Source Input Capacitance
Common Source Reverse Transfer
Capacitance
Equivalent Short Circuit
Input Noise Voltage
g
m
C
iss
C
rss
e
N
爐
25
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
|V
GS1
鈥?V
GS2
|
IFN860
Min
鈥?20
3
鈥?0.3
10
25
鈥?
Typ
Max
Unit
V
nA
V
mA
mV
Process NJ450L
Test Conditions
I
G
= 鈥?1 碌A(chǔ), V
DS
= 脴V
V
GS
= 鈥?10V, V
DS
= 脴V
V
DS
= 10V, I
D
= 100 碌A(chǔ)
V
DS
= 10V, V
GS
= 脴 V
V
DS
= 10V, I
D
= 100 碌A(chǔ)
40
30
17
35
20
2
mS
pF
pF
nV/鈭欻z
V
DS
= 10V, I
D
= 鈥?10 mA
V
DS
= 10V, I
D
= 鈥?10 mA
V
DS
= 10V, I
D
= 鈥?10 mA
V
DG
= 3V, I
D
= 10 mA
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
TO脨71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 5 Source,
6 Drain, 7 Gate
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375