01/99
B-47
IFN5911, IFN5912
N-Channel Dual Silicon Junction Field-Effect Transistor
樓 VHF Amplifiers
樓 Wideband Differential
Amplifiers
Absolute maximum ratings at T
A
= 25隆C
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
50 mA
500 mW
4 mW/擄C
鈥?65擄C to 200擄C
At 25擄C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Cutoff Voltage
Gate Source Voltage
Drain Saturation Current (Pulsed)
V
(BR)GSS
I
GSS
I
G
V
GS(OFF)
V
GS
I
DSS
IFN5911
Min
鈥?25
鈥?100
鈥?250
鈥?100
鈥?100
鈥?
鈥?0.3
7
鈥?
鈥?
40
IFN5912
Min
鈥?25
鈥?100
鈥?250
鈥?100
鈥?100
鈥?
鈥?0.3
7
鈥?
鈥?
40
Process NJ30L or NJ36D
Unit
V
pA
nA
pA
nA
V
V
mA
Max
Max
Test Conditions
I
G
= 鈥?1 碌A(chǔ), V
DS
= 脴V
V
GS
= 鈥?15V, V
DS
= 脴V
V
GS
= 鈥?15V, V
DS
= 脴V
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 1 nA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, V
GS
= 脴V
T
A
= 125擄C
T
A
= 150擄C
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source
Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
Noise Figure
Differential Gate Current
Saturation Drain Current Ratio
Differential Gate Source Voltage
Gate Source Voltage
Differential Drift
Transconductance Ratio
g
fs
g
os
C
iss
C
rss
e
N
爐
NF
|I
G1
| 鈥?|I
G2
|
I
DSS1
/ I
DSS2
0.95
V
GS1
鈥?V
GS2
鈭哣
GS1
鈥?V
GS2
鈭員
鈭哣
GS1
鈥?V
GS2
鈭員
3000 10000 3000 10000
3000 10000 3000 10000
100
150
5
1.2
20
1
20
1
10
20
20
0.95
1
0.95
0.95
100
150
5
1.2
20
1
20
1
15
40
40
1
碌S
碌S
碌S
碌S
pF
pF
nV/鈭欻z
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
R
G
= 100 K鈩?/div>
V
DG
= 10V, I
D
= 5 mA
V
DS
= 10V, V
GS
= 脴V
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
f = 1 kHz
f = 100 MHz
f = 1 kHz
f = 100 MHz
f = 1 MHz
f = 1 MHz
f = 10 kHz
f = 10 Hz
T
A
= 125擄C
dB
nA
mV
碌V/擄C
碌V/擄C
T
A
= 25擄C
T
B
= 125擄C
T
A
= 鈥?55擄C
T
B
= 25擄C
f = 1 kHz
g
fs1
/ g
fs2
TO脨78 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case,
5 Source, 6 Drain, 7 Gate, 8 Omitted
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1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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