01/99
B-29
IF142
N-Channel Silicon Junction Field-Effect Transistor
樓 Low-Noise, High Gain Amplifier
Absolute maximum ratings at T
A
= 25隆C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
鈥?20 V
10 mA
375 mW
3 mW/擄C
鈥?65擄C to 200擄C
At 25擄C free air temperature:
Static Electrical Characteristics
IF142
Min
Max
Unit
Process NJ14AL
Test Conditions
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Gate Source Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
V
(BR)GSS
I
GSS
V
GS(OFF)
V
GS
V
GS(F)
I
DSS
鈥?25
鈥?0.1
鈥?0.2
鈥?
鈥?
1
15
V
nA
nA
V
V
V
mA
I
G
= 鈥?1 碌A(chǔ), V
DS
= 脴V
V
GS
= 鈥?15V, V
DS
= 脴V
V
GS
= 鈥?15V, V
DS
= 脴V
V
DS
= 15V, I
D
= 5 nA
V
DS
= 15V, I
D
= 50 碌A(chǔ)
V
DS
= 脴, I
G
= 1 mA
V
DS
= 15V, V
GS
= 脴V
T
A
= 150擄C
5
Common Source
Forward Transmittance
Common Source
Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Y
fs
Y
os
C
iss
C
rss
3.5
0.05
3
0.6
Typ
mS
碌S
pF
pF
V
DS
= 15V, V
GS
= 脴V
V
DS
= 15V, V
GS
= 脴V
V
DS
= 15V, V
GS
= 脴V
V
DS
= 15V, V
GS
= 脴V
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
Equivalent Short Circuit
Input Noise Voltage
e
N
爐
4
nV/鈭欻z
V
DS
= 12V, V
GS
= 脴V
f = 10 Hz
TO脨236AB Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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