B-30
01/99
IF1320
N-Channel Silicon Junction Field-Effect Transistor
樓 Low-Noise, High Gain Amplifier
Absolute maximum ratings at T
A
= 25隆C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
鈥?20 V
10 mA
225 mW
1.8 mW擄C
鈥?65擄C to 200擄C
At 25擄C free air temperature:
Static Electrical Characteristics
IF1320
Min
Max
Unit
Process NJ132L
Test Conditions
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
鈥?20
鈥?0.35
5
鈥?0.1
鈥?1.5
20
V
nA
V
mA
I
G
= 鈥?1 碌A(chǔ), V
DS
= 脴V
V
DS
= 脴V, V
GS
= 鈥?10V
V
DS
= 10V, I
D
= 0.5 nA
V
DS
= 10V, V
GS
= 脴V
Common Source
Forward Transconductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
g
fs
C
iss
C
rss
15
20
5
Typ
mS
pF
pF
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 5 mA
f = 1 kHz
f = 1 MHz
f = 1 MHz
Equivalent Short Circuit
Input Noise Voltage
e
N
爐
2.5
nV/鈭欻z
V
DS
= 10V, I
D
= 5 mA
f = 1 kHz
TO脨236AB Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
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