音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

IDT71V3577YS85BQG Datasheet

  • IDT71V3577YS85BQG

  • 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-T...

  • 22頁

  • IDT

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預覽

128K X 36, 256K X 18
3.3V Synchronous SRAMs
3.3V I/O, Flow-Through Outputs
Burst Counter, Single Cycle Deselect
Features
x
x
IDT71V3577S
IDT71V3579S
IDT71V3577SA
IDT71V3579SA
Description
The IDT71V3577/79 are high-speed SRAMs organized as
128K x 36/256K x 18. The IDT71V3577/79 SRAMs contain write, data,
address and control registers. There are no registers in the data output
path (flow-through architecture). Internal logic allows the SRAM to gen-
erate a self-timed write based upon a decision which can be left until the
end of the write cycle.
The burst mode feature offers the highest level of performance to the
system designer, as the IDT71V3577/79 can provide four cycles of data
for a single address presented to the SRAM. An internal burst address
counter accepts the first cycle address from the processor, initiating the
access sequence. The first cycle of output data will flow-through from the
array after a clock-to-data access time delay from the rising clock edge of
the same cycle. If burst mode operation is selected (ADV=LOW), the
subsequent three cycles of output data will be available to the user on the
next three rising clock edges. The order of these three addresses are
defined by the internal burst counter and the
LBO
input pin.
The IDT71V3577/79 SRAMs utilize IDT鈥檚 latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and a 165 fine pitch ball grid array (fBGA).
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Output
Input
Input
I/O
Supply
Supply
Synchronous
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Synchronous
Synchronous
Synchronous
DC
Synchronous
Synchronous
N/A
Synchronous
Asynchronous
Asynchronous
Synchronous
N/A
N/A
5280 tbl 01
x
x
x
x
x
x
x
128K x 36, 256K x 18 memory configurations
Supports fast access times:
Commercial:
鈥?7.5ns up to 117MHz clock frequency
Commercial and Industrial:
鈥?8.0ns up to 100MHz clock frequency
鈥?8.5ns up to 87MHz clock frequency
LBO
input selects interleaved or linear burst mode
Self-timed write cycle with global write control (GW byte write
GW),
GW
enable (BWE and byte writes (BW
BWE),
BWx)
BWE
BW
3.3V core power supply
Power down controlled by ZZ input
3.3V I/O
Optional - Boundary Scan JTAG Interface (IEEE 1149.1
compliant)
Packaged in a JEDEC Standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball
grid array
Pin Description Summary
A
0
-A
17
Address Inputs
Chip Enable
Chip Selects
Output Enable
Global Write Enable
Byte Write Enable
Individual Byte Write Selects
Clock
Burst Address Advance
Address Status (Cache Controller)
Address Status (Processor)
Linear / Interleaved Burst Order
Test Mode Select
Test Data Input
Test Clock
Test Data Output
JTAG Reset (Optional)
Sleep Mode
Data Input / Output
Core Power, I/O Power
Ground
CE
CS
0
,
CS
1
OE
GW
BWE
BW
1
,
BW
2
,
BW
3
,
BW
4
(1)
CLK
ADV
ADSC
ADSP
LBO
TMS
TDI
TCK
TDO
TRST
ZZ
I/O
0
-I/O
31
, I/O
P1
-I/O
P4
V
DD
, V
DDQ
V
SS
NOTE:
1.
BW
3
and
BW
4
are not applicable for the IDT71V3579.
1
漏2005 Integrated Device Technology, Inc.
FEBRUARY 2005
DSC-5280/08

IDT71V3577YS85BQG相關型號PDF文件下載

您可能感興趣的PDF文件資料

熱門IC型號推薦

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務：
賣家服務：
技術客服：

0571-85317607

網(wǎng)站技術支持

13606545031

客服在線時間周一至周五
9:00-17:30

關注官方微信號，
第一時間獲取資訊。

建議反饋
返回頂部

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務的動力！意見一經(jīng)采納，將有感恩紅包奉上哦！