CMOS Static RAM
64K (16K x 4-Bit)
IDT7188S
IDT7188L
x
Features
High-speed (equal access and cycle times)
鈥?Military: 25/35/45/55/70/85ns (max.)
Low power consumption
Battery backup operation 鈥?2V data retention
(L version only)
Available in high-density industry standard 22-pin, 300 mil
ceramic DIP
Produced with advanced CMOS technology
Inputs/outputs TTL-compatible
Military product compliant to MIL-STD-883, Class B
innovative circuit design techniques, provides a cost effective approach
for memory intensive applications.
Access times as fast as 25ns are available. The IDT7188 offers a
reduced power standby mode, I
SB1
, which is activated when
CS
goes
HIGH. This capability significantly decreases power while enhancing
system reliability. The low-power version (L) version also offers a battery
backup data retention capability where the circuit typically consumes only
30碌W operating from a 2V battery.
All inputs and outputs are TTL-compatible and operate from a single
5V supply. The IDT7188 is packaged in a 22-pin, 300 mil ceramic DIP
providing excellent board-level packing densities.
Military grade product is manufactured in compliance with the latest
revision of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance
and reliability.
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Description
The IDT7188 is a 65,536-bit high-speed static RAM organized as
16K x 4. It is fabricated using IDT鈥檚 high-performance, high-reliability
technology 鈥?CMOS. This state-of-the-art technology, combined with
Functional Block Diagram
A
0
V
CC
GND
65,536-BIT
MEMORY ARRAY
DECODER
A
13
I/O
0
I/O
1
I/O
2
I/O
3
COLUMN I/O
INPUT
DATA
CONTROL
,
CS
WE
2989 drw 01
FEBRUARY 2001
1
漏2000 Integrated Device Technology, Inc.
DSC-2989/09
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