CMOS STATIC RAM
256K (32K x 8-BIT)
Integrated Device Technology, Inc.
IDT71256S
IDT71256L
FEATURES:
鈥?High-speed address/chip select time
鈥?Military: 25/30/35/45/55/70/85/100/120/150ns (max.)
鈥?Commercial: 20/25/35/45ns (max.) Low Power only.
鈥?Low-power operation
鈥?Battery Backup operation 鈥?2V data retention
鈥?Produced with advanced high-performance CMOS
technology
鈥?Input and output directly TTL-compatible
鈥?Available in standard 28-pin (300 or 600 mil) ceramic
DIP, 28-pin (600 mil) plastic DIP, 28-pin (300 mil) SOJ
and 32-pin LCC
鈥?Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT71256 is a 262,144-bit high-speed static RAM
organized as 32K x 8. It is fabricated using IDT鈥檚 high-
performance, high-reliability CMOS technology.
Address access times as fast as 20ns are available with
power consumption of only 350mW (typ.). The circuit also
offers a reduced power standby mode. When
CS
goes HIGH,
the circuit will automatically go to, and remain in, a low-power
standby mode as long as
CS
remains HIGH. In the full standby
mode, the low-power device consumes less than 15碌W,
typically. This capability provides significant system level
power and cooling savings. The low-power (L) version also
offers a battery backup data retention capability where the
circuit typically consumes only 5碌W when operating off a 2V
battery.
The lDT71256 is packaged in a 28-pin (300 or 600 mil)
ceramic DIP, a 28-pin 300 mil J-bend SOlC, and a 28-pin (600
mil) plastic DIP, and 32-pin LCC providing high board-level
packing densities.
The IDT71256 military RAM is manufactured in compliance
with the latest revision of MIL-STD-883, Class B, making it
ideally suited to military temperature applications demanding
the highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
A
0
ADDRESS
DECODER
A
14
262,144 BIT
MEMORY ARRAY
V
CC
GND
I/O
0
INPUT
DATA
CIRCUIT
I/O
7
I/O CONTROL
CS
OE
WE
CONTROL
CIRCUIT
2946 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
漏1996
Integrated Device Technology, Inc.
AUGUST 1996
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