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Preliminary data

IDP30E120

IDB30E120

Product Summary

V

RRM

I

F

V

F

T

jmax

1200

30

1.65

150

P-TO220-2-2.

Feature

Fast recovery

Soft switching



1200 V EmCon

technology

Low reverse recovery charge

Low forward voltage

Easy paralleling

Type

IDP30E120

IDB30E120

Package

P-TO220-2-2.

P-TO220-3.SMD Q67040-S4383

Maximum Ratings,at

T

j

= 25 擄C, unless otherwise specified

Parameter

Repetitive peak reverse voltage

Continous forward current

T

C

=25擄C

T

C

=90擄C

Surge non repetitive forward current

T

C

=25擄C,

t

p

=10 ms, sine halfwave

Maximum repetitive forward current

T

C

=25擄C,

t

p

limited by

T

jmax

,

D=0.5

Power dissipation

T

C

=25擄C

T

C

=90擄C

Operating and storage temperature

Soldering temperature

1.6mm(0.063 in.) from case for 10s



Fast Switching EmCon



Diode

V

A

V

擄C











P-TO220-3.SMD

Ordering Code

Q67040-S4390

Marking

D30E120

D30E120

Pin 1

C

NC

PIN 2

A

C

PIN 3

-

A

Symbol

V

RRM

I

F

Value

1200

50

30

Unit

V

A

I

FSM

I

FRM

P

tot

102

76.5

W

138

66

T

j ,

T

stg

T

S

-55...+150

260

擄C

擄C

Page 1

2001-12-12

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