Preliminary data
IDP04E120
IDB04E120
Product Summary
V
RRM
I
F
V
F
T
jmax
1200
4
1.65
150
P-TO220-2-2.
Feature
Fast recovery
Soft switching
1200 V EmCon
technology
Low reverse recovery charge
Low forward voltage
Easy paralleling
Type
IDP04E120
IDB04E120
Package
P-TO220-2-2.
P-TO220-3.SMD Q67040-S4386
Maximum Ratings,at
T
j
= 25 擄C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continous forward current
T
C
=25擄C
T
C
=90擄C
Surge non repetitive forward current
T
C
=25擄C,
t
p
=10 ms, sine halfwave
Maximum repetitive forward current
T
C
=25擄C,
t
p
limited by
T
jmax
,
D=0.5
Power dissipation
T
C
=25擄C
T
C
=90擄C
Operating and storage temperature
Soldering temperature
1.6mm(0.063 in.) from case for 10s
Fast Switching EmCon
Diode
V
A
V
擄C
P-TO220-3.SMD
Ordering Code
Q67040-S4388
Marking
D04E120
D04E120
Pin 1
C
NC
PIN 2
A
C
PIN 3
-
A
Symbol
V
RRM
I
F
Value
1200
11.2
7.1
Unit
V
A
I
FSM
I
FRM
P
tot
28
16.5
W
43.1
20.6
T
j ,
T
stg
T
S
-55...+150
260
擄C
擄C
Page 1
2001-12-12