IDD04S60C
2
nd
Generation thinQ!
TM
SiC Schottky Diode
Features
鈥?Revolutionary semiconductor material - Silicon Carbide
鈥?Switching behavior benchmark
鈥?No reverse recovery/ No forward recovery
鈥?No temperature influence on the switching behavior
鈥?High surge current capability
鈥?Pb-free lead plating; RoHS compliant
鈥?Qualified according to JEDEC
1)
for target applications
鈥?Breakdown voltage tested at 5mA
2)
Product Summary
V
DC
Q
c
I
F
600
8
4
V
nC
A
PG-TO252
3
1
thinQ! 2G Diode specially designed for fast switching applications like:
鈥?CCM PFC
鈥?Motor Drives
Type
IDD04S60C
Package
PG-TO252
Marking
D04S60C
Pin 1
n.c.
Pin 2
A
2
Pin 3
C
Maximum ratings,
at
T
j
=25 擄C, unless otherwise specified
Parameter
Continuous forward current
RMS forward current
Symbol Conditions
I
F
I
F,RMS
T
C
<130 擄C
f
=50 Hz
T
C
=25 擄C,
t
p
=10 ms
T
j
=150 擄C,
T
C
=100 擄C,
D
=0.1
T
C
=25 擄C,
t
p
=10 碌s
T
C
=25 擄C,
t
p
=10 ms
Value
4
5.6
32
Unit
A
Surge non-repetitive forward current,
I
F,SM
sine halfwave
Repetitive peak forward current
Non-repetitive peak forward current
i
虜t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
I
F,RM
I
F,max
鈭玦
2
dt
V
RRM
dv/ dt
P
tot
T
j
,
T
stg
18
132
5.1
600
A
2
s
V
V/ns
W
擄C
V
R
= 0鈥?480V
T
C
=25 擄C
50
37
-55 ... 175
Rev. 2.0
page 1
2006-04-03