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IBM43RF0100 Datasheet

  • IBM43RF0100

  • TRANSISTOR | BJT | NPN | 4.5V V(BR)CEO | 75MA I(C) | SOT-353

  • 7頁

  • ETC

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IBM43RF0100
SiGe High Dynamic Range Low Noise Transistor
Features
鈥?Low Noise Figure: NFmin
鈮?/div>
1.1dB @ 2.0GHz
V
CE
= 2.0V, I
C
=5mA
鈥?Low Operating Voltage V
CE
= 1.0 to 2.5V
鈥?Input IIP3 Capability:
鈮?/div>
+ 10dBm @ 2.0GHz,
V
CE
= 2.5V, I
C
=10mA
鈥?Package: SOT353
Description
The IBM43RF0100 is a Silicon-Germanium (SiGe)
NPN transistor designed for high performance, low
cost applications. Utilizing IBM鈥檚 SiGe process and
packaging technologies, high gain, low noise and
exceptional linearity at low power consumption are
possible. Assembled in a miniature surface mount
package, this product is designed for applications
requiring high performance such as LNAs, VCOs,
and other low noise transistor applications.
Pin Diagram
4
Pin Assignments
Pin 1
Pin 2
Base
Ground
1
Emitter
Collector
Emitter
5
Pin 3
Pin 4
3
2
1
Pin 5
1. Connection requires a low resistance path to signal
ground.
sgrf0100.06
06/09/00
漏IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 7

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