IBM43RCLNA1115
Datasheet
SiGe 900 MHz GSM Low-Noise Amplifier with Gain Control
Features
鈥?925-960 MHz operation for GSM applica-
tions
鈥?Low power, single 2.8 volt supply
鈥?Gain control feature with 0, 17, and 25 dB
gain settings
RF IN 1
8 GC2
7 GC1
6 GND
5 RF OUT
Applications
鈥?GSM portable transceivers
Figure 1. IBM43RCLNA1115 Low Noise
Amplifier
鈥?40 dB of reverse isolation at all gain settings
GND 2
鈥?Standby Mode with less than 20
碌A(chǔ)
current
consumption
鈥?Compact MSOP-8L package
鈥?High IIP3 and low noise meet demanding
system requirements
VCC 3
ARLNA 4
MSOP-8L Package
3.0x3.0 mm.
Description
The IBM43RCLNA1115 is a gain-controlled
low-noise amplifier (LNA) implemented using
IBM Microelectronics Silicon Germanium
(SiGe) technology.
The LNA is designed for low power consump-
tion and uses a 2.8 volt power supply. It is opti-
mized for GSM applications that require
amplifiers with very high reverse isolation such
as direct conversion where the LNA is more
susceptible to local oscillator leakage.
The IBM43RCLNA1115 is programmable for
three levels of gain, and it has a very low power
standby mode.
The inputs for gain control and standby mode
are 3V CMOS compatible.
External capacitors in series with the input and
output are required for DC blocking and as part
of the impedance matching networks. A series
inductor on the input and a shunt inductor on
the output are also part of the matching
network. Proper selection of these components
ensures optimized LNA performance in the
desired band.
Specifications in this data sheet were obtained
using the circuit in the IBM evaluation board for
this product.
Ordering Information
To order samples of the LNA or an evaluation
board, contact an IBM sales representative or
distributor. Regional contact information is
located on the IBM Microelectronics Division
web site at:
www.ibm.com/chips/support/howtobuy.html
Part Number
IBM43RCLNA1115
Product
SiGe 900 MHz GSM Low-
Noise Amplifier with Gain
Control
900 MHz LNA Evaluation
Board
IBM43RCLNA1115EVBA
Note:
The low noise amplifier is susceptible to damage from electrostatic
discharge (ESD). Observe normal ESD precautions at all times.
April 03, 2002
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