Discontinued (4/1/00 last order; 7/31/00 - last ship)
IBM11M4730C4M x 72 E12/10, 5.0V, Au.
IBM13T4644MPE
4M x 64 PC100 SDRAM SO DIMM
Features
鈥?144 Pin JEDEC Standard, 8 Byte Small Outline
Dual-In-line Memory Module
鈥?4Mx64 Synchronous DRAM SO DIMM
鈥?Performance: PC100
CAS Latency
f
CK
t
CK
t
AC
Clock Frequency
Clock Cycle
Clock Access Time
-360
3
100
10
6
Units
MHz
ns
ns
鈥?Inputs and outputs are LVTTL (3.3V) compatible
鈥?10 Ohm Resistors on DQs
鈥?Single 3.3V
鹵
0.3V Power Supply
鈥?Single Pulsed RAS interface
鈥?SDRAMs have four internal banks
鈥?Fully Synchronous to positive Clock Edge
鈥?Data Mask for Byte Read/Write control
鈥?Programmable Operation:
- CAS Latency: 2, 3
- Burst Type: Sequential or Interleave
- Burst Length: 1, 2, 4, 8, Full-Page (Full-
Page supports Sequential burst only)
- Operation: Burst Read and Write or Multiple
Burst Read with Single Write
鈥?Auto Refresh (CBR) and Self Refresh
鈥?Automatic and controlled Precharge Commands
鈥?Suspend Mode and Power Down Mode
鈥?12/8/2 Addressing (Row/Column/Bank)
鈥?4096 refresh cycles distributed across 64ms
鈥?Serial Presence Detect
鈥?Card size: 2.66" x 1.0" x 0.149"
鈥?Gold contacts
鈥?SDRAMS in TSOP Type II Package
Description
IBM13T4644MPE is a 144-pin Synchronous DRAM
Small Outline Dual In-line Memory Module (SO
DIMM) which is organized as a 4Mx64 high-speed
memory array. The SO DIMM uses four 4Mx16
SDRAMs in 400mil TSOP II packages and achieves
high speed data transfer rates of up to 100MHz by
employing a prefetch/pipeline hybrid architecture
that supports the JEDEC 1N rule while allowing very
low burst power. The SO DIMM is intended to com-
ply with all JEDEC and INTEL PC100 rev 1.2 stan-
dards set for 144 pin SDRAM SO DIMMs.
All control, address, and data input/output circuits
are synchronized with the positive edge of the exter-
nally supplied clock inputs. All inputs are sampled at
the positive edge of the externally supplied clock
(CK0). Internal operating modes are defined by
combinations of the RAS, CAS, WE, S0, DQMB,
and CKE0 signals. A command decoder initiates the
necessary timings for each operation. A 12 bit
address bus accepts address information in a
row/column multiplexing arrangement.
Prior to any access operation, the CAS latency,
burst type, burst length, and burst operation type
must be programmed into the SO DIMM by address
inputs A0-A9 during the mode register set cycle.
The SO DIMM uses serial presence detects imple-
mented via a serial EEPROM using the two pin IIC
protocol. The first 128 bytes of serial PD data are
used by the DIMM manufacturer. The last 128 bytes
are available to the customer.
All IBM 144-pin SO DIMMs provide a high perfor-
mance, flexible 8-byte interface in a 2.66" long
space-saving footprint.
45L7084.E93888B
10/99
漏IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
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