DC COMPONENTS CO., LTD.
R
I882
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 10W audio
amplifier, voltage regulator, DC-DC converter,
and relay driver.
TO-251
.268(6.80)
.252(6.40)
.217(5.50)
.205(5.20)
2
Pinning
1 = Base
2 = Collector
3 = Emitter
.022(0.55)
.018(0.45)
.063(1.60)
.055(1.40)
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation(T
C
=25 C)
Junction Temperature
Storage Temperature
o
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
D
T
J
T
STG
Rating
40
30
5
3
7
600
10
+150
-55 to +150
Unit
V
V
V
A
A
mA
W
o
o
.284(7.20)
.268(6.80)
1
.035 Max
(0.90)
2
3
.059(1.50)
.035(0.90)
.256
Min
(6.50)
.024(0.60)
.018(0.45)
.032
Max
(0.80)
.181 Typ
(4.60)
.095(2.40)
.087(2.20)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
(1)
Min
40
30
5
-
-
-
-
30
100
-
-
Typ
-
-
-
-
-
0.3
1
-
-
90
45
Max
-
-
-
1
1
0.5
2
-
500
-
-
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
V
-
-
MHz
pF
Test Conditions
I
C
=100碌A(chǔ), I
E
=0
I
C
=1mA, I
B
=0
I
E
=10碌A(chǔ), I
C
=0
V
CB
=30V, I
E
=0
V
EB
=3V, I
C
=0
I
C
=2A, I
B
=0.2A
I
C
=2A, I
B
=0.2A
I
C
=20mA, V
CE
=2V
I
C
=1A, V
CE
=2V
I
C
=0.1A, V
CE
=5V, f=100MHz
V
CB
=10V, f=1MHz
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(1)
DC Current Gain
(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
V
CE(sat)
V
BE(sat)
h
FE1
h
FE2
f
T
C
ob
380碌s, Duty Cycle 2%
Classification of h
FE2
Rank
Range
Q
100~200
P
160~320
E
250~500
1
