HYS 64V4300GU
SDRAM-Modules
3.3 V 4M
脳
64-Bit 1 Bank SDRAM Module
168-pin Unbuffered DIMM Modules
鈥?168 Pin unbuffered 8 Byte Dual-In-Line
SDRAM Modules for PC main memory
applications
鈥?PC100 and PC133 versions
鈥?One bank 4M
脳
64 organization
鈥?Optimized for byte-write non-parity and ECC
applications
鈥?JEDEC standard Synchronous DRAMs
(SDRAM)
鈥?Fully PC board layout compatible to INTEL鈥檚
latest module specification
鈥?SDRAM Performance:
-7.5
PC133
-8
PC100
100
MHz
Unit
鈥?Programmed Latencies:
Product Speed
-7.5
-8
CL
t
RCD
3
2
t
RP
3
2
PC133 3
PC100 2
鈥?Single 3.3 V (鹵 0.3 V) power supply
鈥?Programmable CAS Latency, Burst Length,
and Wrap Sequence
(Sequential & Interleave)
鈥?Auto Refresh (CBR) and Self Refresh
鈥?Decoupling capacitors mounted on substrate
鈥?All inputs and outputs are LVTTL compatible
鈥?Serial Presence Detect with E
2
PROM
鈥?Utilizes 4M
脳
16 SDRAMs in
TSOPII-54 packages with
4096 refresh cycles every 64 ms
鈥?133.35 mm
脳
29.31 mm
脳
4.00 mm card size
with gold contact pads
f
CK
Clock
Frequency
(max.)
133
t
AC
Clock Access 5.4
Time
6
ns
The HYS 64V4300 is an industry standard 168-pin 8-byte Dual in-line Memory Module (DIMM)
which is organized as 4M
脳
64 in an one bank high speed memory arrays designed with 64 Mbit
Synchronous DRAMs for non-parity applications. The DIMMs use -7.5 speed sorted 4M
脳
16
SDRAM devices in TSOP54 packages to meet the PC133-333 requirements and -8 parts for the
standard PC100 applications. Decoupling capacitors are mounted on the PC board. The PC board
design is according to INTEL鈥檚 module specification.
The DIMMs have a serial presence detect, implemented with a serial E2PROM using the 2-pin I
2
C
protocol. The first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are
available to the end user.
All Infineon 168-pin DIMMs provide a high performance, flexible 8-byte interface in a 133.35 mm
long footprint.,
Data Book
1
12.99