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HYM7V73A801BTFG Datasheet

  • HYM7V73A801BTFG

  • 8Mx72|3.3V|P/S|x9|SDR SDRAM - Unbuffered DIMM 64MB

  • 13頁(yè)

  • ETC

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8Mx72 bits
PC133 SDRAM Unbuffered DIMM
based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh
HYM7V73A801B F-Series
DESCRIPTION
The Hynix HYM7V73A801B F-Series are 8Mx72bits ECC Synchronous DRAM Modules. The modules are composed of
nine 8Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP
package on a 168pin glass-epoxy printed circuit board. A 0.33uF and a 0.1uF decoupling capacitors per each SDRAM
are mounted on the PCB.
The HYM7V73A801B F-Series are Dual In-line Memory Modules suitable for easy interchange and addition of 64Mbytes
memory. The HYM7V75A801B F-Series are offering fully synchronous operation referenced to a positive edge of the
clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally
pipelined to achieve very high bandwidth.
FEATURES
鈥?/div>
PC133/100MHz support
鈥?/div>
168pin SDRAM Unbuffered DIMM
鈥?/div>
Serial Presence Detect with EEPROM
鈥?/div>
1.375鈥?(34.93mm) Height PCB with Single Sided
components
鈥?/div>
Single 3.3
鹵
0.3V power supply
鈥?/div>
All devices pins are compatible with LVTTL interface
鈥?/div>
Data mask function by DQM
鈥?/div>
SDRAM internal banks : four banks
鈥?/div>
Module bank : one physical bank
鈥?/div>
Auto refresh and self refresh
鈥?/div>
4096 refresh cycles / 64ms
鈥?/div>
Programmable Burst Length and Burst Type
-. 1, 2, 4, 8, or Full Page for Sequential Burst
-. 1, 2, 4 or 8 for Interleave Burst
鈥?/div>
Programmable /CAS Latency
-. 2, 3 clocks
ORDERING INFORMATION
PART NO.
HYM7V73A801BTFG-75
MAX.
FREQUENCY
133MHz
INTERNAL
BANK
4 Banks
REF.
4K
POWER
Normal
SDRAM
PACKAGE
TSOP-II
PLATING
Gold
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev. 1.1/Apr.01
漏1999
Hyundai Electronics

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