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HYM7V63401BTRG-75 Datasheet

  • HYM7V63401BTRG-75

  • x64 SDRAM Module

  • 162.97KB

  • 13頁

  • ETC

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4Mx64 bits
PC133 SDRAM Unbuffered DIMM
based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh
HYM7V63401B R-Series
DESCRIPTION
The Hynix HYM7V63401B R-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four
4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package
on a 168pin glass-epoxy printed circuit board. Two 0.33uF and a 0.1uF decoupling capacitors per each SDRAM are
mounted on the PCB.
The HYM7V63401B R-Series are Dual In-line Memory Modules suitable for easy interchange and addition of 32Mbytes
memory. The HYM7V63401B R-Series are offering fully synchronous operation referenced to a positive edge of the
clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally
pipelined to achieve very high bandwidth.
FEATURES
鈥?/div>
PC133/100MHz support
鈥?/div>
168pin SDRAM Unbuffered DIMM
鈥?/div>
Serial Presence Detect with EEPROM
鈥?/div>
1.375鈥?(34.93mm) Height PCB with Single Sided
components
鈥?/div>
Single 3.3
0.3V power supply
鈥?/div>
All devices pins are compatible with LVTTL interface
鈥?/div>
Data mask function by DQM
鈥?/div>
SDRAM internal banks : four banks
鈥?/div>
Module bank : one physical bank
鈥?/div>
Auto refresh and self refresh
鈥?/div>
4096 refresh cycles / 64ms
鈥?/div>
Programmable Burst Length and Burst Type
-. 1, 2, 4, 8, or Full Page for Sequential Burst
-. 1, 2, 4 or 8 for Interleave Burst
鈥?/div>
Programmable /CAS Latency
-. 2, 3 Clocks
ORDERING INFORMATION
PART NO.
HYM7V63401BTRG-75
MAX.
FREQUENCY
133MHz
INTERNAL
BANK
4 Banks
REF.
4K
POWER
Normal
SDRAM
PACKAGE
TSOP-II
PLATING
Gold
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.1/APr.01
漏1999
Hyundai Electronics

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