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HYM76V16635HGT8 Datasheet

  • HYM76V16635HGT8

  • 16Mx64|3.3V|K/H|x16|SDR SDRAM - Unbuffered DIMM 128MB

  • 13頁

  • ETC

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16M x64bits
P C 1 3 3 S D R A M U n b u ffered D I M
M
based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh
HYM76V16635HGT8 Series
D E S C R IP T IO N
The Hynix HYM76V16635AT8 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of sixteen 8Mx8bits
CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
printed circuit board. One 0.22uF and one 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB.
The Hynix HYM76V16635AT8 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 128Mbytes
memory. The Hyundai HYM76V16635AT8 Series are fully synchronous operation referenced to the positive edge of the clock . All
inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high
bandwidth.
FEATURES
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PC133/PC100MHz support
168pin SDRAM Unbuffered DIMM
Serial Presence Detect with EEPROM
1.25鈥?(31.75mm) Height PCB with double sided com-
ponents
Single 3.3鹵0.3V power supply
- 1, 2, 4 or 8 or Full page for Sequential Burst
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All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
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Programmable CAS Latency ; 2, 3 Clocks
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SDRAM internal banks : four banks
Module bank : two physical bank
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
O R D E R IN G IN F O R M A T IO N
Part No.
HYM76V16635HGT8-K
133MHz
HYM76V16635HGT8-H
4 Banks
4K
Normal
TSOP-II
Gold
Clock
Frequency
Internal
Bank
Ref.
Power
SDRAM
Package
Plating
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of
circuits described. No patent licenses are implied.
Rev. 0.3/Apr.01

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