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HYM72V32M736BLT6 Datasheet

  • HYM72V32M736BLT6

  • 32Mx72|3.3V|H|x10|SDR SDRAM - SO DIMM 256MB

  • 13頁(yè)

  • ETC

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32Mx72bits
PC133 SDRAM ECC SO DIMM
based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh
HYM72V32M736B(L)T6 Series
DESCRIPTION
The HYM72V32M736B(L)T6 Series are 32Mx72bits Synchronous DRAM Modules. The modules are composed of ten
16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP pack-
age on a 144pin glass-epoxy printed circuit board.
The HYM72V32M736B(L)T6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of
256Mbytes memory. The HYM72V32M736B(L)T6 Series are fully synchronous operation referenced to the positive
edge of the clock . All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are
internally pipelined to achieve very high bandwidth.
FEATURES
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PC133/PC100MHz support
144pin SDRAM SO DIMM
Serial Presence Detect with EEPROM
1.25鈥?(31.75mm) Height PCB with Double sided
components
Single 3.3鹵0.3V power supply
- 1, 2, 4 or 8 or Full page for Sequential Burst
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All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
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Programmable CAS Latency ; 2, 3 Clocks
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SDRAM internal banks : four banks
Module bank : two physical bank
Auto refresh and self refresh
8192 refresh cycles / 64ms
Programmable Burst Length and Burst Type
ORDERING INFORMATION
Part No.
HYM72V32M736BT6-H
HYM72V32M736BLT6-H
Clock
Frequency
133MHz
133MHz
Internal
Bank
4 Banks
Ref.
8K
Power
Normal
Low Power
SDRAM
Package
TSOP-II
Plating
Gold
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.1/May. 02
1

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