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HYM72V32M656AT6-P Datasheet

  • HYM72V32M656AT6-P

  • x64 SDRAM Module

  • 14頁

  • ETC

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32Mx64 bits
PC100 SDRAM SODIMM
based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh
HYM72V32M656AT6 Series
DESCRIPTION
The HYM72V32M656AT6 Series are high speed 3.3-Volt Synchronous DRAM Modules composed of eight 16Mx16 bit
Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 144-pin Zig Zag Dual pin glass-epoxy
printed circuit board. Three 0.1uF decoupling capacitors per each SDRAM are mounted on the module.
The HYM72V32M656AT6 Series are gold plated socket type Dual In-line Memory Modules suitable for easy interchange
and addition of 256Mbytes
. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths
are internally pipelined to achieve very high bandwidth.
FEATURES
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PC100 support
144pin SDRAM SO DIMM
Serial Presence Detect with EEPROM
1.25鈥?(31.75mm) Height PCB with double sided com-
ponents
Single 3.3鹵0.3V power supply
- 1, 2, 4 or 8 or Full page for Sequential Burst
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All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
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Programmable CAS Latency ; 2, 3 Clocks
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SDRAM internal banks : four banks
Module bank : two physical bank
Auto refresh and self refresh
8192 refresh cycles / 64ms
Programmable Burst Length and Burst Type
ORDERING INFORMATION
Part No.
HYM72V32M656AT6-8
HYM72V32M656AT6-P
HYM72V32M656AT6-S
HYM72V32M656ALT6-8
HYM72V32M656ALT6-P
HYM72V32M656ALT6-S
Clock
Frequency
125MHz
100MHz
100MHz
Internal
Bank
Ref.
Power
SDRAM
Package
Plating
Normal
4 Banks
8K
Low Power
TSOP-II
Gold
125MHz
100MHz
100MHz
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of
circuits described. No patent licenses are implied.
Rev. 1.2/Feb.01

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