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HYM72V32M636AT6-H Datasheet

  • HYM72V32M636AT6-H

  • x64 SDRAM Module

  • 13頁

  • ETC

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32Mx64 bits
PC133 SDRAM SO DIMM
based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh
HYM72V32M636AT6 Series
DESCRIPTION
The Hyundai HYM72V32M636AT6HYM72V32M636AT6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are com-
posed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP pack-
age on a 168pin glass-epoxy printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each SDRAM are mounted
on the PCB.
The Hyundai HYM72V32M636AT6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 256Mbytes
memory. The Hyundai HYM72V32M635T6 Series are fully synchronous operation referenced to the positive edge of the clock . All
inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high
bandwidth.
FEATURES
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PC133/PC100MHz support
168pin SDRAM Unbuffered DIMM
Serial Presence Detect with EEPROM
1.25鈥?(31.75mm) Height PCB with double sided com-
ponents
Single 3.3鹵0.3V power supply
- 1, 2, 4 or 8 or Full page for Sequential Burst
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All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
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Programmable CAS Latency ; 2, 3 Clocks
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SDRAM internal banks : four banks
Module bank : two physical bank
Auto refresh and self refresh
8192 refresh cycles / 64ms
Programmable Burst Length and Burst Type
ORDERING INFORMATION
Part No.
HYM72V32M636AT6-H
HYM72V32M636LT6-H
Clock
Frequency
133MHz
Internal
Bank
4 Banks
Ref.
Power
Normal
SDRAM
Package
TSOP-II
Plating
8K
Low Power
Gold
133MHz
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of
circuits described. No patent licenses are implied.
Rev. 1.2/Feb.01

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