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HYM72V16M656BTU6 Datasheet

  • HYM72V16M656BTU6

  • 16Mx64|3.3V|8/P/S|x4|SDR SDRAM - SO DIMM 128MB

  • 14頁(yè)

  • ETC

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16Mx64 bits
PC100 SDRAM SO DIMM
based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh
HYM72V16M656BTU6 Series
DESCRIPTION
The HYM72V16M656BTU6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits
CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy
printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.
The HYM72V16M656BTU6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 128Mbytes mem-
ory. The HYM72V16M656BTU6 Series are fully synchronous operation referenced to the positive edge of the clock . All inputs and
outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth.
FEATURES
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PC100MHz support
144pin SDRAM Micro SO DIMM
Serial Presence Detect with EEPROM
1.18鈥?(30.00mm) Height PCB with double sided com-
ponents
Single 3.3鹵0.3V power supply
- 1, 2, 4 or 8 or Full page for Sequential Burst
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All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
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Programmable CAS Latency ; 2, 3 Clocks
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SDRAM internal banks : four banks
Module bank : one physical bank
Auto refresh and self refresh
8192 refresh cycles / 64ms
Programmable Burst Length and Burst Type
ORDERING INFORMATION
Part No.
HYM72V16M656TU6-8
HYM72V16M656TU6-P
HYM72V16M656TU6-S
HYM72V16M656TU6-8
HYM72V16M656TU6-P
HYM72V16M656TU6-S
Clock
Frequency
125MHz
100MHz
100MHz
125MHz
100MHz
100MHz
Internal
Bank
Ref.
Power
SDRAM
Package
Plating
Normal
4 Banks
4K
Low Power
TSOP-II
Gold
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use
of circuits described. No patent licenses are implied.
Rev. 0.1/Apr. 02
1

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