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HYM72V16M636T6 Datasheet

  • HYM72V16M636T6

  • 16Mx64|3.3V|H|x4|SDR SDRAM - SO DIMM 128MB

  • 13頁(yè)

  • ETC

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16Mx64 bits
PC133 SDRAM SO DIMM
based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh
HYM72V16M636T6 Series
DESCRIPTION
The Hyundai HYM72V16M636T6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four
16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
glass-epoxy printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.
The Hyundai HYM72V16M636T6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 128Mbytes
memory. The Hyundai HYM72V16M636T6 HYM72V16M636LT6 Series are fully synchronous operation referenced to the positive
edge of the clock . All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipe-
lined to achieve very high bandwidth.
FEATURES
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PC133/PC100MHz support
168pin SDRAM Unbuffered DIMM
Serial Presence Detect with EEPROM
1.00鈥?(25.40mm) Height PCB with double sided com-
ponents
Single 3.3鹵0.3V power supply
- 1, 2, 4 or 8 or Full page for Sequential Burst
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All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
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Programmable CAS Latency ; 2, 3 Clocks
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SDRAM internal banks : four banks
Module bank : one physical bank
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
ORDERING INFORMATION
Part No.
HYM72V16M636T6-H
HYM72V16M636LT6-H
Clock
Frequency
133MHz
Internal
Bank
4 Banks
Ref.
Power
Normal
SDRAM
Package
TSOP-II
Plating
8K
Low Power
Gold
133MHz
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of
circuits described. No patent licenses are implied.
Rev. 1.0/Dec.99

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