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2 097 152 words by 32-bit organization
1 memory bank
Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
Fast page mode capability
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
Single + 5 V (鹵 10 %) supply
Low power dissipation
max. 2640 mW active (-50 version)
max. 2420 mW active (-60 version)
max. 2200 mW active (-70 version)
CMOS 鈥?22 mW standby
TTL
鈥?4 mW standby
CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
4 decoupling capacitors mounted on substrate
All inputs, outputs and clocks fully TTL compatible
72 pin Single in-Line Memory Module (L-SIM-72-9 ) with 20.32 mm (800 mil) height
Utilizes four 2M
脳
8 -DRAMs in 400 mil SOJ packages
2048 refresh cycles / 32 ms with 11/10 addressing
Optimized for use in byte-write non-parity applications
Tin-Lead contact pads (S-version)
Gold contact pads (GS - version)
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Semiconductor
Semicunductor Group
1
9.95
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HYM322030GS-60相關(guān)型號PDF文件下載
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