鈥?/div>
1 048 576 words by 32-bit organization
(alternative 2 097 152 words by 16-bit)
Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
Single + 5 V (鹵 10 %) supply
Low power dissipation
max. 4840 mW active (-60 version)
max. 4400 mW active (-70 version)
CMOS 鈥?44 mW standby
TTL
鈥?88 mW standby
鈥?/div>
CAS-before-RAS refresh, RAS-only-refresh,
Hidden refresh
8 decoupling
substrate
capacitors
mounted
on
鈥?/div>
鈥?/div>
鈥?/div>
All inputs, outputs and clock fully TTL
compatible
72 pin Single in-Line Memory Module
Utilizes eight 1M
脳
4-DRAMs in 300 mil SOJ
packages
1024 refresh cycles /16 ms
Tin-Lead contact pads (S - version)
Gold contact pads (GS - version)
single sided module with 25.4 mm (1000 mil)
height
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鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Ordering Information
Type
HYM 321160S-60
HYM 321160S-70
HYM 321160GS-60
HYM 321160GS-70
Ordering Code
Q67100-Q2010
on request
Q67100-Q2009
on request
Package
L-SIM-72-11
L-SIM-72-11
L-SIM-72-11
L-SIM-72-11
Descriptions
DRAM module
(access time 60 ns)
DRAM module
(access time 70 ns)
DRAM module
(access time 60 ns)
DRAM module
(access time 70 ns)
Semiconductor Group
541
09.94
next
HYM321160GS-60相關型號PDF文件下載
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型號
版本
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廠商
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英文版
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英文版
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英文版
1M x 32-Bit Dynamic RAM Module
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英文版
1M x 32-Bit Dynamic RAM Module
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英文版
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英文版
2M x 32-Bit Dynamic RAM Module
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英文版
2M x 32-Bit Dynamic RAM Module
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英文版
2M x 32-Bit Dynamic RAM Module
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英文版
2M x 32-Bit Dynamic RAM Module
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英文版
2M x 32-Bit Dynamic RAM Module
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英文版
2M x 32-Bit Dynamic RAM Module
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英文版
2M x 32-Bit Dynamic RAM Module
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英文版
4M x 32-Bit Dynamic RAM Module
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英文版
4M x 32-Bit Dynamic RAM Module
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英文版
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英文版
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