HY62UF16806A Series
512Kx16bit full CMOS SRAM
Document Title
512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM
Revision History
Revision No
00
01
History
Initial Draft
Change Logo
- Hyundai
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Hynix
Change DC Parameter
- Isb1(LL) : 40uA
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- Isb1(Typ) : 8uA
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- Icc
: 5mA
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- Icc1(1us) : 8mA
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- Icc1(Min) : 50mA
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Change Data Retention
- IccDR(LL) : 25uA
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Change AC Parameter
- tOE
: 35ns
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: 40ns
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- tCW
: 50ns
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- tAW
: 50ns
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- tBW
: 50ns
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- tWP
: 45ns
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- tCHZ
: 30ns
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- tOHZ
: 30ns
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- tBHZ
: 30ns
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25uA
1uA
4mA
4mA
40mA
15uA
25ns@55ns
35ns@70ns
45ns@55ns
45ns@55ns
45ns@55ns
45ns@55ns
20ns@55ns , 30ns
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25ns@70ns
20ns@55ns , 30ns
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25ns@70ns
20ns@55ns , 30ns
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25ns@70ns
Draft Date
Feb.21.2001
Apr.28.2001
Remark
Preliminary
02
Jan.28.2002
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.02 /Jan. 2002
Hynix Semiconductor