HY62UF16800B Series
512Kx16bit full CMOS SRAM
Document Title
512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM
Revision History
Revision No
00
01
History
Initial Release
DC Para Change
Icc
4mA
脿
Icc1(Min) 40mA
脿
Icc1(1us)
8mA
脿
Isb
0.1mA
脿
Isb1
25uA
脿
Iccdr
12uA
脿
Pin Connection
E3 DNU
脿
E3 NC
Draft Date
May.29.2001
Mar.20.2002
3mA
20mA
2mA
0.3mA
15uA
6uA
Apr.10.2002
Remark
Preliminary
02
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.02 / Apr. 2002
Hynix Semiconductor