HY62UF16404C Series
256Kx16bit full CMOS SRAM
Document Title
256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM
Revision History
Revision No
00
01
History
Initial Draft
Part No Change
85ns Part Delete
Marking Information add
tBLZ value is changed (10ns -> 5ns at 70ns Speed)
tBLZ / tOLZ value is changed
Icc1 value is changed
Output Load is redefined
Isb, Isb1, Vdr ,Iccdr are redefined
Changed Logo
Changed Isb1 values
Draft Date
Jul.06.2000
Oct.30.2000
Remark
Preliminary
Preliminary
02
Dec.02.2000
Preliminary
03
Dec.15.2000
Final
04
05
Mar.23.2001
Jun.07.2001
Final
Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev.05 / Jun.01
Hynix Semiconductor