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HY62KF16403E Datasheet

  • HY62KF16403E

  • x16|2.7~3.6V|55/70|Super Low Power Slow SRAM - 4M

  • 10頁

  • ETC

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HY62KF16403E Series
256Kx16bit full CMOS SRAM
Document Title
256K x 16bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM
Revision History
Revision No
00
01
History
Initial Draft
Draft Date
Dec.26.2001
Remark
Preliminary
Final
Absolute Maximum Ratings
Nov.14.2002
- Vcc changed -0.3V to 4.6V -> -0.3V to 4.0V
DC Electric Characteristics
- ICC changed 4mA -> 3mA
- ICC1 changed 25mA at 55ns -> 20mA at 55ns
- ICC1 changed 20mA at 70ns -> 15mA at 70ns
- ICC1 changed 3mA at 1us -> 2mA at 1us
AC Test Conditions
- Output Load changed 5pF -> 30pF
Data Retention Electric Characteristics
- ICCDR changed 10uA -> 6uA
Marking Information
- Part Name changed HY62KF6403E ->HY62KF16403E
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.01 / Nov.02
Hynix Semiconductor

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