HY57V283220T/ HY5V22F
4 Banks x 1M x 32Bit Synchronous DRAM
Revision History
0.1 : new generation
0.2 : FBGA Ball configuration typo
靾橃爼
Functional Block Diagram A10
-->
A11
DC Operation Condition
鞐愳劀
VDDmin
靾橃爼 3.0V -> 3.135V
Capacitance Value
靾橃爼
C11,3,5 --> 4pf / C12 3.8 -->4pf
tAC2 Value
旮辦瀰
-5 part
鞐愳劀
tRAS CLK
旮辦瀰
0.3 : DC Value
鞛呺牓
0.4 : TSOPVersion
毿?攵勲Μ ,
Preliminary
靷牅
0.5 : FBGA
鞕€ 雼れ嫓 韱淀暕
, DC II Typo
靾橃爼
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.5/Oct. 02