HY51S16163HG(HGL) Datasheet

IC型號(hào)：
HY51S16163HG(HGL)
PDF描述：
1Mx16|3.3V|4K|5/6|FP/EDO DRAM - 16M
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109.11KB
PDF頁數(shù)：
12頁
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ETC

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HY51V(S)16163HG/HGL

1M x 16Bit EDO DRAM

PRELIMINARY

DESCRIPTION

The HY51V(S)16163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit.

HY51V(S)16163HG/HGL has realized higher density, higher performance and various functions by utiliz-

ing advanced CMOS process technology. The HY51V(S)16163HG/HGL offers Extended Data Out Page-

Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)16163HG/HGL to be

packaged in standard 400mil 42pin SOJ and 44(50) pin TSOP-II. The package size provides high system

bit densities and is compatible with widely available automated testing and insertion equipment.

FEATURES

鈥?/div>

Extended Data Out Mode capability

Read-modify-write capability

Multi-bit parallel test capability

TTL(3.3V) compatible inputs and outputs

/RAS only, CAS-before-/RAS, Hidden and self

refresh(L-version) capability

Fast access time and cycle time

Part No

HY51V(S)16163HG/HGL-5

HY51V(S)16163HG/HGL-6

HY51V(S)16163HG/HGL-7

tRAC

50ns

60ns

70ns

鈥?/div>

JEDEC standard pinout

42pin plastic SOJ / 44(50)pin TSOP-II (400mil)

Single power supply of 3.3V +/- 0.3V

Battery back up operation(L-version)

2CAS byte control

鈥?/div>

tCAC

13ns

15ns

18ns

tRC

84ns

104ns

124ns

tHPC

20ns

25ns

30ns

鈥?/div>

Power dissipation

50ns

Active

Standby

396mW

60ns

360mW

70ns

324mW

鈥?/div>

Refresh cycle

Part No

HY51V16163HG

HY51V16163HGL

Ref

Normal

64ms

128ms

L-part

7.2mW(CMOS level Max)

0.83mW (L-version : Max)

ORDERING INFORMATION

Part Number

HY51V(S)16163HGJ/HG(L)J-5

HY51V(S)16163HGJ/HG(L)J-6

HY51V(S)16163HGJ/HG(L)J-7

HY51V(S)16163HGT/HG(L)T-5

HY51V(S)16163HGT/HG(L)T-6

HY51V(S)16163HGT/HG(L)T-7

(S) : Self refresh,

(L) : Low power

Access Time

50ns

60ns

70ns

50ns

60ns

70ns

Package

400mil 42pin SOJ

400mil 44(50)pin TSOP-II

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev.0.1/Apr.01

型號(hào)

版本

描述

廠商

下載
HY514400

英文版

1M x 4-bit CMOS DRAM

ETC

HY514400
HY514400

英文版

1M x 4-bit CMOS DRAM

ETC [ETC]

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HY5116404

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ETC

HY5116404
HY5117404

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ETC

HY5117404
HY5118164

英文版

IC,DRAM,EDO,1MX16,CMOS,SOJ,42PIN,PLASTIC

Hynix

HY5118164
HY514400A

英文版

1M x 4-bit CMOS DRAM

ETC

HY514400A
HY514400A

英文版

1M x 4-bit CMOS DRAM

ETC [ETC]

HY514400A
HY514400B

英文版

1Mx4, Fast Page mode

ETC

HY514400B
HY514400B

英文版

1Mx4, Fast Page mode

ETC [ETC]

HY514400B
HY514400J

英文版

1M x 4-bit CMOS DRAM

ETC

HY514400J
HY514400J

英文版

1M x 4-bit CMOS DRAM

ETC [ETC]

HY514400J
HY5116404B

英文版

Hyundai

HY5116404B
HY5117404B

英文版

Hyundai

HY5117404B
HY514400AJ

英文版

1M x 4-bit CMOS DRAM

ETC

HY514400AJ
HY514400AJ

英文版

1M x 4-bit CMOS DRAM

ETC [ETC]

HY514400AJ
HY514400AR

英文版

1M x 4-bit CMOS DRAM

ETC

HY514400AR
HY514400AR

英文版

1M x 4-bit CMOS DRAM

ETC [ETC]

HY514400AR
HY514400AT

英文版

1M x 4-bit CMOS DRAM

ETC

HY514400AT
HY514400AT

英文版

1M x 4-bit CMOS DRAM

ETC [ETC]

HY514400AT
HY514400BJ

英文版

1Mx4, Fast Page mode

ETC

HY514400BJ

HY51S16163HG(HGL) Datasheet

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