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HY29F400A Datasheet

  • HY29F400A

  • 4M(X8/X16)|5.0V|50|NOR FLASH - 4M

  • 40頁

  • ETC

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HY29F400A
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES
5 Volt Read, Program, and Erase
鈥?Minimizes system-level power requirements
High Performance
鈥?Access times as fast as 50 ns
Low Power Consumption
鈥?20 mA typical active read current in byte
mode, 28 mA typical in word mode
鈥?30 mA typical program/erase current
鈥?5 碌A(chǔ) maximum CMOS standby current
Compatible with JEDEC Standards
鈥?Package, pinout and command-set
compatible with the single-supply Flash
device standard
鈥?Provides superior inadvertent write
protection
Sector Erase Architecture
鈥?Boot sector architecture with top and
bottom boot block options available
鈥?One 16 Kbyte, two 8 Kbyte, one 32 Kbyte
and seven 64 Kbyte sectors in byte mode
鈥?One 8 Kword, two 4 Kword, one 16 Kword
and seven 32 Kword sectors in word mode
鈥?A command can erase any combination of
sectors
鈥?Supports full chip erase
Erase Suspend/Resume
鈥?Temporarily suspends a sector erase
operation to allow data to be read from, or
programmed into, any sector not being
erased
GENERAL DESCRIPTION
The HY29F400A is a 4 Megabit, 5 volt only CMOS
Flash memory organized as 524,288 (512K) bytes
or 262,144 (256K) words. The device is offered in
industry-standard 44-pin PSOP and 48-pin TSOP
packages.
The HY29F400A can be programmed and erased
in-system with a single 5-volt V
CC
supply. Internally
generated and regulated voltages are provided for
program and erase operations, so that the device
does not require a high voltage power supply to
perform those functions. The device can also be
programmed in standard EPROM programmers.
Access times as fast as 55 ns over the full operat-
ing voltage range of 5.0 volts 鹵 10% are offered
for timing compatibility with the zero wait state re-
quirements of high speed microprocessors. A 55
ns version operating over 5.0 volts 鹵 5% is also
Preliminary
Revision 1.0, January 2002
Sector Protection
鈥?Any combination of sectors may be locked
to prevent program or erase operations
within those sectors
Temporary Sector Unprotect
鈥?Allows changes in locked sectors
(requires high voltage on RESET# pin)
Internal Erase Algorithm
鈥?Automatically erases a sector, any
combination of sectors, or the entire chip
Internal Programming Algorithm
鈥?Automatically programs and verifies data
at a specified address
Fast Program and Erase Times
鈥?Byte programming time: 7 碌s typical
鈥?Sector erase time: 1.0 sec typical
鈥?Chip erase time: 11 sec typical
Data# Polling and Toggle Status Bits
鈥?Provide software confirmation of
completion of program or erase
operations
Ready/Busy# Output (RY/BY#)
鈥?Provides hardware confirmation of
completion of program and erase
operations
100,000 Program/Erase Cycles Minimum
Space Efficient Packaging
鈥?Available in industry-standard 44-pin
PSOP and 48-pin TSOP and reverse
TSOP packages
LOGIC DIAGRAM
18
A[17:0]
DQ[7:0]
7
CE#
OE#
WE#
RESET#
BYTE#
RY/BY#
DQ[14:8]
DQ[15]/A-1
8

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