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Low Cost GaAs Power FETs
Class A or Class AB Operation
High Efficiency
3V to 6V Operation
1
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
Description
The HWL30NPA is a Medium Power GaAs FET using
surface mount type plastic package for various L-band
applications.
It is suitable for various 900 MHz, 1900
MHz cellular/wireless applications.
2
1
3
Absolute Maximum Ratings
V
DS
V
GS
I
D
I
G
T
CH
T
STG
P
T
*
*
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Total Power Dissipation
+7V
-5V
I
DSS
3mA
150
擄
C
-65 to +150
擄
C
2.8W
PA Package (SOT-89)
Outline Dimensions
mounted on an infinite heat sink.
Electrical Specifications
(TA=25
擄
C) f = 1900 MHz for all RF Tests
Symbol
I
DSS
V
P
g
m
R
th
P
1dB
Parameters & Conditions
Saturated Current at V
DS
=3V, V
GS
=0V
Pinch-off Voltage at V
DS
=3V, I
D
=30mA
Transconductance at V
DS
=3V, I
D
=300mA
Thermal Resistance
Power Output at 1dB Compression Point
V
DS
=3V, I
D
=0.5I
DSS
V
DS
=5V, I
D
=0.5I
DSS
Gain at 1dB Compression Point
V
DS
=3V, I
D
=0.5I
DSS
V
DS
=5V, I
D
=0.5I
DSS
Power-Added Efficiency (P
OUT
= P
1dB
)
V
DS
=3V, I
D
=0.5I
DSS
V
DS
=5V, I
D
=0.5I
DSS
Units
mA
V
mS
擄
C/W
dBm
Min.
500
-3.5
200
-
24.5
27.5
9
10
-
Typ.
600
-2.0
300
35
25.5
28.5
10
11
40
40
Max.
900
-1.5
-
45
-
G
1dB
dB
-
PAE
%
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.