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Low Cost GaAs Power FET
Class A or Class AB Operation
15 dB Typical Gain at 2.4 GHz
5V to 10V Operation
650
860
Outline Dimensions
S ou rce
1
4
Description
The HWL30NC is a medium power GaAs FET
designed for various L-band & S-band applications.
430
2
5
Absolute Maximum Ratings
V
DS
V
GS
I
D
I
G
T
CH
T
STG
P
T
*
210
3
6
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
I
DSS
3mA
175
擄
C
-65 to +175
擄
C
6W
Units:
碌m
Thickness: 100
鹵5
Chip size
鹵50
Bond Pads 1-3 (Gate):
Bond Pads 4-6 (Drain):
0.0
58.5
344.5
400.0
S ou rce
0
* mounted on an infinite heat sink
60 x 60
60 x 60
Electrical Specifications
(T
A
=25
擄
C) f =2.4 GHz for all RF Tests
Symbol
I
DSS
Parameters & Conditions
Saturated Current at V
DS
=3V, V
GS
=0V
Units
mA
Min.
500
Typ.
600
Max.
900
V
P
Pinch-off Voltage at V
DS
=3V, I
D
=30mA
V
-3.5
-2.0
-1.5
g
m
P
1dB
Transconductance at V
DS
=3V, I
D
=300mA
Power Output at Test Points
V
DS
=10V, I
D
=0.5 I
DSS
Gain at 1dB Compression Point
V
DS
=10V, I
D
=0.5 I
DSS
Power-Added Efficiency (P
OUT
= P
1dB
)
V
DS
=10V, I
D
=0.5 I
DSS
mS
-
300
-
dBm
30
31
-
G
1dB
dB
13
14
-
PAE
%
30
40
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
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