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HWL27NPB Datasheet

  • HWL27NPB

  • L-Band GaAs Power FET

  • 94.37KB

  • 4頁

  • HW

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HWL27NPB
L-Band GaAs Power FET
Autumn 2002 V1
Features
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Outline Dimensions
Plastic Packaged GaAs Power FET
Suitable for Commercial Wireless
Applications
High Efficiency
3V Operation
2
3
1
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
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Description
The HWL27NPB is a medium Power GaAs FET using
surface mount type plastic package for various L-Band
applications.
It is suitable for various 900 MHz, 1900
MHz cellular/wireless applications.
Absolute Maximum Ratings
V
DS
VGS
ID
IG
TCH
TSTG
PT
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+7V
-5V
I
DSS
2mA
150
擄
C
-65 to +150
擄
C
0.7W
PB Package (SOT-23)
Electrical Specifications
(T
A
=25
擄
C) f=1900 MHz for all RF Tests
Symbol
I
DSS
V
P
Parameters & Conditions
Saturated Current at V
DS
=3V, V
GS
=0V
Pinch-off Voltage at V
DS
=3V, I
D
=20mA
Transconductance at V
DS
=3V, I
D
=200mA
Thermal Resistance
Power Output at Test Points
V
DS
=3V, I
D
=0.5I
DSS
Gain at 1dB Compression Point
V
DS
=3V, I
D
=0.5I
DSS
Power-Added Efficiency (P
OUT
= P
1dB
)
V
DS
=3V, I
D
=0.5I
DSS
Units
mA
V
mS
擄
C/W
Min.
300
-3.5
-
-
Typ.
400
-2.0
220
45
Max.
-
-1.5
-
-
g
m
R
th
P
1dB
dBm
22.5
24.5
-
G
1dB
dB
8.0
-
PAE
%
40.0
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.

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