鈥?/div>
Low Cost GaAs Power FET
Class A or Class AB Operation
18 dB Typical Gain at 2.4 GHz
5V to 10V Operation
376
Outline Dimensions
451.5
1
Description
The HWL26YC is a medium power GaAs FET
designed for various L-band & S-band applications.
226
226.0
2
76
4
Absolute Maximum Ratings
0
V
DS
V
GS
I
D
I
G
T
CH
T
STG
P
T
*
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
I
DSS
1mA
175
擄
C
-65 to +175
擄
C
1.7W
0.0
3
75.5
275
440
524
* mounted on an infinite heat sink
Units:
碌m
Thickness: 50
鹵5
Chip size
鹵50
Bond Pad 1, 3 (Source): 100 x 100
Bond Pad 2
(Gate): 100 x 100
Bond Pad 4
(Drain): 100 x 100
Electrical Specifications
(T
A
=25
擄
C) f = 2.4 GHz for all RF Tests
Symbol
I
DSS
Parameters & Conditions
Saturated Current at V
DS
=3V, V
GS
=0V
Units
mA
Min.
150
Typ.
200
Max.
280
V
P
Pinch-off Voltage at V
DS
=3V, I
D
=10mA
V
-3.5
-2.0
-1.5
g
m
P
1dB
Transconductance at V
DS
=3V, I
D
=100mA
Power Output at Test Points
V
DS
=10V, I
D
=0.5 I
DSS
Gain at 1dB Compression Point
V
DS
=10V, I
D
=0.5 I
DSS
Power-Added Efficiency (P
OUT
= P
1dB
)
V
DS
=10V, I
D
=0.5 I
DSS
mS
-
120
-
dBm
25
26
-
G
1dB
dB
16
17
-
PAE
%
35
42
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
1
2
