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Low Cost
Description
The HWF1687RA is a medium power GaAs MESFET
designed for various RF and Microwave applications.
It is presently offered in a low cost, surface-mountable
ceramic package.
Absolute Maximum Ratings
V
DS
[1]
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
I
DSS
3 mA
175
擄
C
-65 to +175
擄
C
6W
V
GS
I
D
I
G
T
CH
T
STG
P
T
[1]
[2]
RA Package (Ceramic)
Hexawave recommends that the quiescent
drain-source operating voltage (V
DS
) should not exceed
10 Volts.
[2] Mounted on an infinite heat sink.
Electrical Specification at 25
擄
C
Symbol
I
DSS
V
P
Parameters
Saturated Drain Current
Pinch-off Voltage
Transconductance
Thermal Resistance
Output Power @1dB Gain
Linear Power Gain
Power-added Efficiency (P
out
= P
1dB
)
Third-order Intercept Point
[3]
Conditions
V
DS
=3V, V
GS
=0V
V
DS
=3V, I
DS
=30 mA
V
DS
=3V, I
DS
=300 mA
Channel to Case
V
DS
=10V
I
DS
=0.5I
DSS
f=2.4 GHz
Units
mA
V
mS
擄
C/W
dBm
dB
%
dBm
Min.
500
-3.5
-
-
30.5
15
-
-
Typ.
600
-2.0
300
15
31.5
16
45
46
Max.
900
-1.5
-
25
-
-
-
-
g
m
R
th
P
1dB
G
L
PAE
IP
3
[3] Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP
3
Hexawave Inc.
2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
All specifications are subject to change without notice.
1
2
3
