鈥?/div>
Low Cost
Description
The HWF1686RA is a medium power GaAs
MESFET designed for various RF and Microwave
applications. It is presently offered in a low cost,
surface-mountable ceramic package.
Absolute Maximum Ratings
V
DS
[1]
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
I
DSS
2 mA
175
擄
C
-65 to +175
擄
C
3.5 W
V
GS
I
D
I
G
T
CH
T
STG
P
T
[1]
[2]
RA Package (Ceramic)
Hexawave recommends that the quiescent
drain-source operating voltage (V
DS
) should not
exceed 10 Volts.
[2]Mounted on an infinite heat sink.
Electrical Specification at 25
擄
C
Symbol
I
DSS
V
P
Parameters
Saturated Drain Current
Pinch-off Voltage
Transconductance
Thermal Resistance
Output Power @1dB Gain
Linear Power Gain
Power-added Efficiency (P
out
= P
1dB
)
Third-order Intercept Point
[3]
Conditions
V
DS
=3V, V
GS
=0V
V
DS
=3V, I
DS
=20 mA
V
DS
=3V, I
DS
=200 mA
Channel to Case
V
DS
=10V
I
DS
=0.5I
DSS
f=2.4 GHz
Units
mA
V
mS
擄
C/W
dBm
dB
%
dBm
Min.
300
-3.5
-
-
29.0
15
-
-
Typ.
400
-2.0
200
30
30.0
16
45
45
Max.
600
-1.5
-
40
-
-
-
-
g
m
R
th
P
1dB
G
L
PAE
IP
3
[3] Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP
3
Hexawave Inc.
2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
All specifications are subject to change without notice.
1
2
3
