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Low Cost GaAs Power FET
1525.0
Outline Dimensions
1392.5
Class A or Class AB Operation
9
8.5 dB Typical Gain at 4 GHz
1235.0
5V to 10V Operation
1077.5
1
10
5
Description
920.0
2
6
The HWC34NC is a power GaAs FET designed
for various L-band & S-band applications.
762.5
11
605.0
Absolute Maximum Ratings
447.5
3
12
7
V
DS
V
GS
I
D
I
G
T
CH
T
STG
P
T
*
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
290.0
-5V
132.5
4
13
0.0
8
I
DSS
6mA
175
擄
C
-65 to +175
擄
C
12W
0.0
444.5
75.5
524.0
* mounted on an infinite heat sink
Units:
碌m
Thickness: 100
鹵5
Chip size
鹵50
Bond Pads 1-4 (Gate):
100 x 100
Bond Pads 5-8 (Drain):
100 x 100
Bond Pads 9-13(Source): 100 x 100
Electrical Specifications
(T
A
=25
擄
C) f = 4 GHz for all RF Tests
Symbol
I
DSS
Parameters & Conditions
Saturated Current at V
DS
=3V, V
GS
=0V
Units
mA
Min.
900
Typ.
1200
Max.
1600
V
P
Pinch-off Voltage at V
DS
=3V, I
D
=60mA
V
-3.5
-2.0
-1.5
g
m
P
1dB
Transconductance at V
DS
=3V, I
D
=600mA
Power Output at Test Points
V
DS
=10V, I
D
=0.5 I
DSS
Gain at 1dB Compression Point
V
DS
=10V, I
D
=0.5 I
DSS
Power-Added Efficiency (P
OUT
= P
1dB
)
V
DS
=10V, I
D
=0.5 I
DSS
mS
-
700
-
dBm
32
33
-
G
1dB
dB
6.5
7.5
-
PAE
%
25
30
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
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