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Low Cost GaAs Power FET
Class A or Class AB Operation
11 dB Typical Gain at 4 GHz
5V to 10V Operation
435
650
Outline Dimensions
Source
Description
The HWC27NC is a medium power GaAs FET
designed
for
various
L-band
&
S-band
applications.
1
3
215
2
4
Absolute Maximum Ratings
V
DS
V
GS
I
D
I
G
T
CH
T
STG
P
T
*
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
I
DSS
2mA
175
擄
C
-65 to +175
擄
C
3.5W
0.0 58.5
0.0
Source
344.5 400
* mounted on an infinite heat sink
Unit:
碌m
Thickness: 100
鹵
5
Chip size
鹵
50
Bond Pads 1-2 (Gate):
Bond Pads 3-4 (Drain):
60 x 60
60 x 60
Electrical Specifications
(T
A
=25
擄
C) f = 4 GHz for all RF Tests
Symbol
I
DSS
Parameters & Conditions
Saturated Current at V
DS
=3V, V
GS
=0V
Units
mA
Min.
300
Typ.
400
Max.
600
V
P
Pinch-off Voltage at V
DS
=3V, I
D
=20mA
V
-3.5
-2.0
-1.5
g
m
P
1dB
Transconductance at V
DS
=3V, I
D
=200mA
Power Output at Test Points
V
DS
=10V, I
D
=0.5 I
DSS
Gain at 1dB Compression Point
V
DS
=10V, I
D
=0.5 I
DSS
Power-Added Efficiency (P
OUT
= P
1dB
)
V
DS
=10V, I
D
=0.5 I
DSS
mS
-
250
-
dBm
27
28
-
G
1dB
dB
9
10
-
PAE
%
30
40
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
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