SEC. X-O-Y
Note) 1.
2.
3.
4.
鈭?/div>
1.3
鈭?0
to
+60
鈭?0
to
+85
Unit
mW
V
V
V
擄C
擄C
Standard corner R
=
0.20 max.
Thickness of plate : Ni 1
碌m
min.
+
Au 0.1
碌m
min.
Thickness of hologram = 2.3 mm, n = 1.519
Apparent emitting point in figure is designed without
consideration of optical pass in HOE.
Note) *: Recommended supply voltage is 4.5 V to 5.5 V.
I
Block Diagram
1
Pmon
P2
2
3
4
5
Band GAP
P4
P8
P1
P6
P3
P7
P9
P5
P10
7
6
8
10
LD
9
1.33鹵0.2
鈥?/div>
Semiconductor laser and photodetector are
integrated through using micro-mirror.
鈥?/div>
Focus error signal detection: SSD method
鈥?/div>
Tracking error signal detection: 3-beam method
鈥?/div>
Low-power semiconductor laser included
鈥?/div>
Built-in I-V conversion amplifier
O
8
7
6
Y
X
Reference plane
Apparent emitting point
Apparent emitting point
Reference plane
Reference plane
0.25 (Lead frame)
3.0鹵0.4
3.3鹵0.2
I
Features
1
2
3
4
5
10
9
Publication date: October 2001
SHH00003AED
1
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