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HUFA76504DK8T Datasheet

  • HUFA76504DK8T

  • 2.3A, 80V, 0.222 Ohm, Dual N-Channel, Logic Level UltraFET P...

  • 13頁

  • FAIRCHILD

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HUFA76504DK8
Data Sheet
June 2001
2.3A, 80V, 0.222 Ohm, Dual N-Channel,
Logic Level UltraFET Power MOSFET
[ /Title
(HUF7
Packaging
JEDEC MS-012AA
6400S
BRANDING DASH
K8)
/Sub-
ject
(60V,
0.072
1
2
Ohm,
3
4
4A, N-
Chan-
nel,
Symbol
Logic
Level
SOURCE1 (1)
UltraFE
GATE1 (2)
Power
MOS-
FET)
/Author
Features
鈥?Ultra Low On-Resistance
- r
DS(ON)
= 0.200鈩?
V
GS
=
10V
- r
DS(ON)
= 0.222鈩?
V
GS
=
5V
鈥?Simulation Models
- Temperature Compensated PSPICE鈩?and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.Fairchildsemi.com
鈥?Internal R
G
= 50鈩?/div>
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
DRAIN 1 (8)
DRAIN 1 (7)
5
鈥?Transient Thermal Impedance Curve vs Board Mounting
Area
Ordering Information
DRAIN 2 (6)
SOURCE2 (3)
GATE2 (4)
DRAIN 2 (5)
PART NUMBER
HUFA76504DK8
PACKAGE
MS-012AA
BRAND
76504DK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76504DK8T.
/Key-
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
words
(Harris
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Semi-
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
conduc-
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
tor, N-
Drain Current (T = 25
o
C, V = 5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous
A
GS
D
Chan-
Continuous (T
A
= 25
o
C, V
GS
= 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
nel,
Continuous (T
A
= 100
o
C, V
GS
= 4.5V) (Figure 2) (Note 3). . . . . . . . . . . . . . . . . . . . . . . . I
D
Logic
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Level
UltraFE
Power Dissipation (Note.2). .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .P.
D
Derate Above 25
o
C . .
.
Power
MOS-
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 50
o
C/W measured using FR-4 board with 0.76 in
2
(490.3 mm
2
) copper pad at 1 second.
3. 228
o
C/W measured using FR-4 board with 0.006 in
2
(3.87 mm
2
) copper pad at 1000 seconds.
HUFA76504DK8
80
80
鹵16
2.3
2.5
1.1
1.1
Figure 4
Figures 6, 17, 18
2.5
20
-55 to 150
300
260
UNITS
V
V
V
A
A
A
A
W
mW/
o
C
o
C
o
C
o
C
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.mtp.intersil.com/automotive.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
漏2001 Fairchild Semiconductor Corporation
Rev. A, June 4, 2001
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET廬 is a registered trademark of Fairchild Corporation. PSPICE廬 is a registered trademark of Cadence Corporation.
SABER漏 is a
registered trademark
of Avanti corporation.

HUFA76504DK8T 產(chǎn)品屬性

  • 2,500

  • 分離式半導體產(chǎn)品

  • FET - 陣列

  • UltraFET™

  • 2 個 N 溝道（雙）

  • 邏輯電平門

  • 80V

  • 2.3A

  • 200 毫歐 @ 2.5A，10V

  • 3V @ 250µA

  • 10nC @ 10V

  • 270pF @ 25V

  • 2.5W

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 帶卷 (TR)

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