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HUFA76413DK8T Datasheet

  • HUFA76413DK8T

  • N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mз

  • 263.37KB

  • 11頁

  • FAIRCHILD

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HUFA76413DK8T
January 2003
HUFA76413DK8T
N-Channel Logic Level UltraFET
廬
Power MOSFET
60V, 4.8A, 56m鈩?/div>
General Description
These N-Channel power MOSFETs are manufactured us-
ing the innovative UltraFET
廬
process. This advanced pro-
cess technology achieves the lowest possible on-
resistance per silicon area, resulting in outstanding perfor-
mance. This device is capable of withstanding high energy
in the avalanche mode and the diode exhibits very low re-
verse recovery time and stored charge. It was designed for
use in applications where power efficiency is important,
such as switching regulators, switching convertors, motor
drivers, relay drivers, low-voltage bus switches, and power
management in portable and battery-operated products.
Applications
鈥?Motor and Load Control
鈥?Powertrain Management
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
150擄C Maximum Junction Temperature
UIS Capability (Single Pulse and Repetitive Pulse)
Ultra-Low On-Resistance r
DS(ON)
= 0.049鈩? V
GS
=
10V
Ultra-Low On-Resistance r
DS(ON)
= 0.056鈩? V
GS
=
5V
D1 (8)
D1 (7)
D2 (6)
D2 (5)
1
SO-8
S1 (1)
G1 (2)
S2 (3)
G2 (4)
MOSFET Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
=
Continuous (T
C
=
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above
25
o
C
Operating and Storage Temperature
25
o
C,
V
GS
= 5V)
V
GS
= 5V, R
胃JA
=
228
o
C/W)
125
o
C,
5.1
4.8
1
Figure 4
260
2.5
0.02
-55 to 150
A
A
A
A
mJ
W
W/
o
C
o
C
Parameter
Ratings
60
鹵16
Units
V
V
Thermal Characteristics
R
胃JA
R
胃JA
R
胃JA
Thermal Resistance Junction to Ambient SO-8 (Note 2)
Thermal Resistance Junction to Ambient SO-8 (Note 3)
Thermal Resistance Junction to Ambient SO-8 (Note 4)
50
191
228
o
o
C/W
C/W
o
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
漏2003 Fairchild Semiconductor Corporation
Rev. B

HUFA76413DK8T 產(chǎn)品屬性

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 陣列

  • UltraFET™

  • 2 個 N 溝道（雙）

  • 邏輯電平門

  • 60V

  • 5.1A

  • 49 毫歐 @ 5.1A，10V

  • 3V @ 250µA

  • 23nC @ 10V

  • 620pF @ 25V

  • 2.5W

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • SO-8

  • 帶卷 (TR)

  • HUFA76413DK8T-NDHUFA76413DK8TTR

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