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HUFA75639S3R4851 Datasheet

  • HUFA75639S3R4851

  • TRANSISTOR | MOSFET | N-CHANNEL | 115V V(BR)DSS | 56A I(D) |...

  • 657.97KB

  • 10頁

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HUFA75639S3R4851
Data Sheet
November 2000
File Number
4962
56A, 115V, 0.025 Ohm, N-Channel
UltraFET Power MOSFET
Title
UFA
639
R48
b-
t
A,
0V,
25
m,
an-
raF
wer
OS-
T)
utho
ey-
rds
ter-
rpo-
on,
an-
raF
wer
OS-
This N-Channel power MOSFETs is manufactured using the
innovative UltraFET廬 process. This advanced process
technology achieves the lowest possible on-resistance per
silicon area, resulting in outstanding performance. This
device is capable of withstanding high energy in the
avalanche mode and the diode exhibits very low reverse
recovery time and stored charge. It was designed for use in
applications where power ef鏗乧iency is important, such as
switching regulators, switching converters, motor drivers,
relay drivers, low-voltage bus switches, and power
management in portable and battery-operated products.
Formerly developmental type TA75639.鈥?/div>
Features
鈥?56A, 115V
鈥?Simulation Models
- Temperature Compensated PSPICE廬 and SABER鈩?/div>
Electrical Models
- Spice and Saber Thermal Impedance Models
- www.Intersil.com
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
R4851
BRAND
HUFA75639S3R4851 TO-262AA
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-262AA
SOURCE
DRAIN
GATE
Symbol
D
G
S
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Speci鏗乪d
HUFA75639S3R4851
115
115
鹵
20
56
Figure 4
Figures 6, 14, 15
200
1.35
-55 to 175
300
260
UNITS
V
V
V
A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
鈩?/div>
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
W
W/
o
C
o
C
o
C
o
C
CAUTION: Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speci鏗乧ation is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.mtp.intersil.com/automotive.html.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
漏2001 Fairchild Semiconductor Corporation
HUFA75639S3R4851 Rev. A

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