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HUFA75429D3ST Datasheet

  • HUFA75429D3ST

  • N-Channel UltraFET MOSFETs 60V, 20A, 25mз

  • 11頁(yè)

  • FAIRCHILD

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上傳產(chǎn)品規(guī)格書

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HUFA75429D3S
March 2002
HUFA75429D3S
N-Channel UltraFET
廬
MOSFETs
60V, 20A, 25m鈩?/div>
General Description
These N-Channel power MOSFETs are manufactured us-
ing the innovative UltraFET
廬
process. This advanced pro-
cess technology achieves very low on-resistance per silicon
area, resulting in outstanding performance. This device is
capable of withstanding high energy in the avalanche mode
and the diode exhibits very low reverse recovery time and
stored charge. It was designed for use in applications where
power efficiency is important, such as switching regulators,
switching convertors, motor drivers, relay drivers, low-volt-
age bus switches.
Applications
鈥?Motor & Load Control
鈥?Powertrain Management
Features
鈥?175擄C Maximum Junction Temperature
鈥?UIS Capability (Single Pulse and Repetitive Pulse)
鈥?Ultra-Low On-Resistance r
DS(ON)
= 0.025鈩? V
GS
=
10V
DRAIN (FLANGE)
D
GATE
SOURCE
G
S
TO-252
MOSFET Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
=
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above
25
o
C
Operating and Storage Temperature
125
o
C,
V
GS
= 10V, R
胃JA
=
52
o
C/W)
Parameter
Ratings
60
鹵20
20
4
Figure 4
312
125
0.83
-55 to 175
Units
V
V
A
A
A
mJ
W
W/
o
C
o
C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
1.2
100
52
o
o
C/W
C/W
o
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
漏2002 Fairchild Semiconductor Corporation
Rev. A

HUFA75429D3ST 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • UltraFET™

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 60V

  • 20A

  • 25 毫歐 @ 20A，10V

  • 4V @ 250µA

  • 85nC @ 20V

  • 1090pF @ 25V

  • 125W

  • 表面貼裝

  • TO-252-3，DPak（2 引線+接片），SC-63

  • D-Pak

  • 帶卷 (TR)

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