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HUFA75337S3ST Datasheet

  • HUFA75337S3ST

  • TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | ...

  • 10頁

  • ETC

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HUFA75337G3, HUFA75337P3, HUFA75337S3S
Data Sheet
December 2001
75A, 55V, 0.014 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET廬 process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75337.
Features
鈥?75A, 55V
鈥?Simulation Models
- Temperature Compensated PSPICE廬 and SABER鈩?/div>
Models
- SPICE and SABER Thermal Impedance Models
Available on the web at: www.fairchildsemi.com
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
HUFA75337G3
HUFA75337P3
HUFA75337S3S
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
75337G
75337P
75337S
S
G
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75337S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
漏2001 Fairchild Semiconductor Corporation
HUFA75337G3, HUFA75337P3, HUFA75337S3S Rev. B

HUFA75337S3ST 產(chǎn)品屬性

  • 800

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • UltraFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 55V

  • 75A

  • 14 毫歐 @ 75A，10V

  • 4V @ 250µA

  • 109nC @ 20V

  • 1775pF @ 25V

  • 175W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D²PAK

  • 帶卷 (TR)

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