HUF76407D3, HUF76407D3S
Data Sheet
October 1999
File Number
4664.1
11A, 60V, 0.107 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SOURCE
HUF76407D3
HUF76407D3S
鈥?Ultra Low On-Resistance
- r
DS(ON)
= 0.092鈩?
V
GS
=
10V
- r
DS(ON)
= 0.107鈩?
V
GS
=
5V
鈥?Simulation Models
- Temperature Compensated PSPICE
廬
and SABER
漏
Electrical Models
- Spice and SABER
漏
Thermal Impedance Models
- www.Intersil.com
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
Symbol
D
鈥?Switching Time vs R
GS
Curves
G
Ordering Information
PART NUMBER
S
PACKAGE
TO-251AA
TO-252AA
BRAND
76407D
76407D
HUF76407D3
HUF76407D3S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76407D3ST.
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUF76407D3,
HUF76407D3S
UNITS
V
V
V
A
A
A
A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 135
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 135
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTE:
1. T
J
= 25
o
C to 150
o
C.
60
60
鹵16
11
12
6
6
Figure 4
Figures 6, 17, 18
38
0.25
-55 to 175
300
260
W
W/
o
C
o
C
o
C
o
C
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speci鏗乧ation is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET鈩?is a trademark of Intersil Corporation. PSPICE廬 is a registered trademark of MicroSim Corporation.
SABER
漏
is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999
INTERSIL
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